Silicon carbide, SiC, is produced by heating SiO2 and C to high temperatures according to the equati — Stoichiometry Chemistry Question
Question
Silicon carbide, SiC, is produced by heating SiO2 and C to high temperatures according to the equation:
SiO2 (s) + 3C(s) r SiC(s) + 2CO(g)
How many grams of SiC could be formed by reacting 2.00 g of SiO2 and 2.00 g of C?
A.✓ Correct
1.33
B.
2.26
C.
3.59
D.
4.00
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